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MOS ICs & Technology Pro

價格:免費

更新日期:2018-12-04

檔案大小:因裝置而異

目前版本:1

版本需求:Android 4.0 以上版本

官方網站:http://engineeringapps.net

Email:info@engineeringapps.net

聯絡地址:New Delhi,India,Pin Code: 110003

MOS ICs & Technology Pro(圖1)-速報App

Notes on MOS ICs & Technology (integrated circuit) for easy learning and quick learning. This App is actually a handbook, which covers all the topics of the subject. You can consider this App as a notes which professors guides with in a classroom.

You can very easily pass and succeed in your exams and interviews if you have this App in your mobile phone, and give an overview for a few days.

It covers 114 topics of MOS ICs & Technology in detail. These 114 topics are divided in 8 units

Some of topics Covered in this application are:

1. Moore's Law.

2. Comparison of available technologies

3. Basic MOS Transistors

4. Enhancement mode Transistor action:

5. NMOS Fabrication:

6. CMOS fabrication- P-WELL PROCESS

7. CMOS fabrication-N-WELL PROCESS:

8. CMOS fabrication-Twin-tub process

9. Bi-CMOS technology: - (Bipolar CMOS):

10. Production of e-beam masks

11. Introduction to MOS Transistor

12. Relationship between Vgs and Ids, for a fixed Vds

MOS ICs & Technology Pro(圖2)-速報App

13. MOS equations (Basic DC equations):

14. Second Order Effects

15. CMOS INVETER CHARACTERISTICS

16. Inverter DC Characteristics

17. Graphical Derivation of Inverter DC Characteristics

18. Noise Margin

19. Static Load MOS inverters

20. Transmission gates

21. Tristate Inverter

22. Stick diagrams-Encodings for NMOS process

23. Encodings for CMOS process

24. Encoding for BJT and MOSFETs

25. NMOS and CMOS Design style

26. Design Rules - MOS ICs & Technology

27. Via

28. CMOS lambda based design rules

MOS ICs & Technology Pro(圖3)-速報App

29. Orbit 2um CMOS process

30. Resistance estimation.

31. Sheet resistance of mos transistors

32. Capacitance estimation

33. Delay

34. Inverter delays

35. Formal estimation of delay

36. Driving large capacitive load

37. Optimum value of f

38. Super buffer

39. Bicmos drivers

40. Propagation delay

41. Other sources of capacitance

42. Choice of layers

43. Scaling of mos devices

44. Basic physical design an overview

MOS ICs & Technology Pro(圖4)-速報App

45. Basic physical design an overview

46. Schematic and layout of basic gates-Inverter Gate

47. Schematic and layout of basic gates-NAND and NOR Gate

48. Transmission gate

49. CMOS standard cell design

50. Layout optimization for performance

51. General layout guidelines

52. BICMOS Logic

53. Pseudo nmos logic

54. Other variations of pseudo nmos- Multi drain logic and Ganged logic

55. Other variations of pseudo nmos- Dynamic cmos logic

56. Other variations of pseudo nmos- CLOCKED CMOS LOGIC (C2MOS)

57. CMOS domino logic

58. Cascaded voltage switch logic

59. Pass transistor logic

60. CMOS technology logic circuit structures

MOS ICs & Technology Pro(圖5)-速報App

61. Scaling of MOS Circuits

62. Technology Scaling

63. International Technology Roadmap for Semiconductors (ITRS)

64. Scaling Models and Scaling Factors for Device Parameters

65. Implications of Scaling

66. Interconnect Woes

67. Reachable Radius

68. Dynamic and Static Power

69. Productivity and Physical Limits

70. Limitations of Scaling

71. Substrate doping

72. Depletion width

73. Limits of miniaturization

74. Limits of interconnect and contact resistance

75. Limits due to subthreshold currents

76. Limits due to subthreshold currents

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77. System

78. VLSI design flow

79. 3 Structured Design Approach

80. Regularity

81. MOSFET as a Switch

82. Parallel and series connection of switches

83. CMOS INVERTER

84. NAND gate Design

85. NOR gate Design

86. CMOS Properties

87. Complex gates

88. Complex gates AOI

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